STTH2003CG datasheet(4/11 Pages) STMICROELECTRONICS

4 / 11 page

Characteristics

STTH2003C

4/11

Figure 1.

Conduction losses versus average

forward current (per diode)

Figure 2.

Forward voltage drop versus

forward current (maximum values,

per diode)

P1(W)

δ=tp/T

δ = 0.05

δ = 1

(A)

F(AV)

δ = 0.1

δ = 0.2

δ = 0.5

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

3.00

100

200

(A)

(V)

T =25°C

T =75°C

T =125°C

Figure 3.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-220AB / D2PAK /

I2PAK)

Figure 4.

Relative variation of thermal

impedance junction to case versus

pulse duration (TO-22FP0AB)

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

Z/R

th(j-c)

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Figure 5.

Peak reverse recovery current

versus dIF/dt (90% confidence, per

diode)

Figure 6.

Reverse recovery time versus dIF/dt

(90% confidence, per diode)

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =200V

T =125°C

100

150

200

250

300

350

400

450

500

100

t (ns)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =200V

T =125°C

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