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STP03D200 데이터시트(PDF) 3 Page - STMicroelectronics |
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STP03D200 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 7 page ![]() STP03D200 Electrical characteristics 3/7 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE = 0) VCB = 2000 V 100 µA ICEO Collector cut-off current (IB = 0) VCE = 1200 V 100 µA V(BR)CEO Collector-emitter breakdown voltage (IB = 0) IC = 1 mA 1200 V VEBO Emitter-base voltage (IC = 0) IE = 10 µA 20 V VCE(sat) (1) 1. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Collector-emitter saturation voltage IC = 50 mA; IB = 500 µA 2V VBE(sat) (1) Base-emitter saturation voltage IC = 50 mA; IB = 500 µA 2V hFE DC current gain IC = 20 mA; VCE = 10 V IC = 30 mA; VCE = 10 V 400 350 |
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