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STTH20R04 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STTH20R04
상세설명  High efficiency rectifier
PDF  10 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH20R04 데이터시트(HTML) 4 Page - STMicroelectronics

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Characteristics
STTH20R04
4/10
Figure 7.
Reverse recovery charges versus
dIF/dt (typical values)
Figure 8.
Reverse recovery softness factor
versus dIF/dt (typical values)
0
50
100
150
200
250
300
350
400
0
50
100
150
200
250
300
350
400
450
500
QRR(nC)
I
F=IF(AV)
V
R=200V
T
j=125°C
dI /dt(A/µs)
F
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
50
100
150
200
250
300
350
400
450
500
I
F < 2 x IF(AV)
V
R=200V
T
j=125°C
dI /dt(A/µs)
F
S factor
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
Figure 10.
Transient peak forward voltage
versus dIF/dt (typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
25
50
75
100
125
I
RM
S
FACTOR
I
F=IF(AV)
V
R=200V
Reference: T
j=125°C
Q
RR
T (°C)
j
0
1
2
3
4
5
6
7
8
9
10
0
50
100
150
200
250
300
350
400
450
500
I
F=IF(AV)
T
j=125°C
dI /dt(A/µs)
F
V
(V)
FP
Figure 11.
Forward recovery time
versus dIF/dt (typical values)
Figure 12.
Junction capacitance versus
reverse voltage applied (typical
values)
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
450
500
I
F=IF(AV)
V
FR=1.1 x VF max.
T
j=125°C
dI /dt(A/µs)
F
t (ns)
fr
10
100
1000
1
10
100
1000
C(pF)
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)



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