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STL34NF06 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STL34NF06
상세설명  N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT™ LOW GATE CHARGE STripFET™ II MOSFET
PDF  6 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL34NF06 데이터시트(HTML) 3 Page - STMicroelectronics

  STL34NF06 Datasheet HTML 1Page - STMicroelectronics STL34NF06 Datasheet HTML 2Page - STMicroelectronics STL34NF06 Datasheet HTML 3Page - STMicroelectronics STL34NF06 Datasheet HTML 4Page - STMicroelectronics STL34NF06 Datasheet HTML 5Page - STMicroelectronics STL34NF06 Datasheet HTML 6Page - STMicroelectronics  
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STL34NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. Current Limited by Wire Bonding is 20A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =30V,ID =17 A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
11
ns
tr
Rise Time
50
ns
Qg
Total Gate Charge
VDD =48V,ID =34 A,
VGS =10V
32
43
nC
Qgs
Gate-Source Charge
6.5
nC
Qgd
Gate-Drain Charge
14.4
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-Off-Delay Time
VDD =30V, ID = 17A,
RG = 4.7Ω, VGS =10V
(see test circuit, Figure 3)
27
ns
tf
Fall Time
11
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD (3)
Source-drain Current
34
A
ISDM (2)
Source-drain Current (pulsed)
136
A
VSD (1)
Forward On Voltage
ISD =34 A,VGS =0
1.2
V
trr
Reverse Recovery Time
ISD = 34 A, di/dt = 100A/µs,
VDD =10V,Tj =150°C
(see test circuit, Figure 5)
63
ns
Qrr
Reverse Recovery Charge
151
nC
IRRM
Reverse Recovery Current
4.8
A



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