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STLC1512 데이터시트(PDF) 24 Page - STMicroelectronics

부품명 STLC1512
상세설명  NorthenLiter (PG.lite BiCMOS Analog Front-End Circuit
PDF  26 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STLC1512 데이터시트(HTML) 24 Page - STMicroelectronics

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Appendix E - Board Issues for Heat Dissipation
The internal temperature of the device must remain below 125oC. There are a number of ways to ensure that
this happens.
There are various combinations of maximum ambient temperature and board issues that can contribute to the
junction temperature of the devices on the chip. Different layout techniques can be used to enhance the thermal
coefficient of the package. The following conditions must be true to ensure reliable operation of the line driver.
(EQ E.1)
Where Tambient is the maximum ambient temperature that will be experienced by the device, Rj is the thermal
coefficient as described below and PD is the power dissipation of the chip which is 480mW.
The thermal coefficient is determined by the board layout characteristics and the rate that air is being forced
across the board. The board layout is defined in 2 ways. One is a 2 layer board with signal layers on the top and
bottom. The signal layer has a heat spreading copper plane that spreads from the corner pins of the chip. There
are also thermal vias directly under the chip. The second layout is an 8 layer board with signal layers on the top
an bottom, 4 copper lattice planes (80% 1 ounce copper) and 2 copper ground planes (solid 1 ounce copper).
This layout also has a heat spreading copper plane on the signal layer and thermal vias under the die and in the
copper plane.
The thermal coefficients for these two different boards are given in Table 15. These coefficients are modified
based on the amount of air flow over the board..
Table 15. Thermal Coefficients for Different Board Conditions
Board Type
Rj No Air Flow
(oC/W)
Rj 1m/s Air Flow
(oC/W)
Rj 3m/s Air Flow
(oC/W)
Rj 5m/s Air Flow
(oC/W)
2 Layer
87.2
75.6
63.6
59.4
8 Layer
54.7
50.6
48.0
46.1
T
am bi ent
R
j PD
()
+
125
o
C
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