STG4159BJR datasheet(1/18 Pages) STMICROELECTRONICS

부품명	STG4159BJR

상세설명	Low voltage 0.3Ω max single SPDT switch with break-before-make feature and 10kV contact ESD protection

PDF	18 Pages

Scroll/Zoom	100%

제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

Logo

1 / 18 page

April 2007

Rev 3

1/18

18

STG4159

Low voltage 0.3

Ω max single SPDT switch with

break-before-make feature and 10kV contact ESD protection

Features

■ Wide operating voltage range:

VCC (OPR) = 1.65V to 4.8V

■ Low power dissipation:

ICC = 0.2µA (max.) at TA = 85°C

■ Low "ON" resistance VIN = 0V:

–RON = 0.40Ω (max. TA = 25ºC) at

VCC = 2.25V

–RON = 0.35Ω (max. TA = 25ºC) at

VCC = 3.0V

–RON = 0.30Ω (max. TA = 25ºC) at

VCC = 4.3V

■ Separate supply voltage for switch and control

■ Latch-up performance exceeds 100mA per

JESD 78, Class II

■ ESD performance tested on common channel

(D pin)

– 10kV IEC-61000-4-2 ESD, contact

discharge

– 15kV IEC-61000-4-2 ESD, air discharge

■ ESD performance test on all other pins

– 10kV IEC-61000-4-2 ESD, contact

discharge

– 500V machine model (JESD22 A115-A)

– 1500V charged-device model

(JESD22 C101)

Description

The STG4159 is a high-speed CMOS low voltage

single analog SPDT (Single Pole Dual Throw)

switch or 2:1 multiplexer/demultiplexer switch

fabricated in silicon gate C2MOS technology. It is

designed to operate from 1.65V to 4.58V, making

this device ideal for portable applications. It offers

low ON-resistance (0.45

Ω) at V

CC = 4.3V. The

SEL inputs are provided to control the switches.

The switch S1 is ON (connected to common Port

D) when the SEL input is held high and OFF

(high impedance state exists between the two

ports) when SEL is held low; the switch S2 is ON

(it is connected to common Port D) when the SEL

input is held low and OFF (high impedance state

exist between the two ports) when SEL is held

high.

Additional key features are fast switching speed,

break-before-make delay time and ultra low power

consumption. All inputs and outputs are equipped

with protection circuits against static discharge,

giving them ESD immunity and transient excess

voltage.

Flip-Chip7

www.st.com

Table 1.

Device summary

Part number

Package

Packaging

STG4159

Flip-Chip7

Tube

STG4159BJR

Flip-Chip7

Tape and reel

유사한 부품 번호 - STG4159BJR

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STG4158	435Kb / 21P	Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection 12-Nov-2007
STMicroelectronics	STG4158BJR	435Kb / 21P	Low voltage 0.6 Ω typ single SPDT switch with break-before-make feature and 15 kV ESD protection 12-Nov-2007

More results

유사한 설명 - STG4159BJR

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	STG3699	274Kb / 12P	LOW VOLTAGE 0.5ΩMAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 14-May-2004
	STG3690	171Kb / 11P	LOW VOLTAGE 5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE Jan-2004
	STG3684	256Kb / 11P	LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 18-May-2004
	STG3699A	525Kb / 11P	LOW VOLTAGE 0.5ohm MAX QUAD SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE 23-Mar-2005
	STG3685	498Kb / 10P	LOW VOLTAGE 0.5ohm MAX DUAL SPDT SWITCH, SINGLE ENABLE WITH BREAK BEFORE MAKE FEATURE 04-Jul-2005
	STG3699B	264Kb / 19P	Low Voltage 0.5ohm Max, Quad SPDT Switch with break-before-make feature 17-Feb-2006
	STG3155	383Kb / 18P	Low voltage 0.5廓 Max single SPDT switch with break-before-make feature 25-May-2007
	STG3159	386Kb / 18P	Low voltage 1Ω max single SPDT switch with break-before-make feature 06-Dec-2006
	STG4259	311Kb / 19P	Low voltage 0.3Ω max dual SPDT switch with break-before-make feature and 15KV ESD protection 28-Aug-2007
	STG4160	711Kb / 19P	Low voltage 0.5 single SPDT switch with break-before-make feature and 15 kV contact ESD protection 15-May-2013

More results

STG4159BJR 데이터시트(PDF) 1 Page - STMicroelectronics

STG4159BJR 데이터시트(HTML) 1 Page - STMicroelectronics

유사한 부품 번호 - STG4159BJR

유사한 설명 - STG4159BJR

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

데이터시트 다운로드

링크 URL