STPIC6C595_08 datasheet(7/22 Pages) STMICROELECTRONICS

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STPIC6C595

Electrical characteristics

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3.2

Switching characteristics

Note:

All voltage value are with respect to GND

Each power DMOS source is internally connected to GND

Pulse duration

≤ 100 µs and duty cycle ≤ 2 %

Drain supply voltage = 15 V, starting junction temperature (TJS) = 25 °C. L = 1.5 H and

IAS = 200 mA (see Fig. 11 and 12)

Technique should limit TJ - TC to 10 °C maximum

These parameters are measured with voltage sensing contacts separate from the current-

carrying contacts.

Nominal current is defined for a consistent comparison between devices from different

sources. It is the current that produces a voltage drop of 0.5 V at TC = 85 °C.

Table 6. Switching characteristics (VCC = 5 V, TC = 25 °C, unless otherwise specified.)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

tPHL

Propagation delay

time, high to low level

output from G

CL = 30 pF, ID = 75 mA

(See Figure 4, Figure 5,

Figure 6, Figure 7, Figure 20)

tPLH

Propagation delay

time, low to high level

output from G

130

Rise time, drain output

Fall time, drain output

tpd

propagation delay time

Reverse recovery

current rise time

IF = 100 mA, di/dt = 10 A/µs

(See Figure 5, Figure 6, and

Figure 9, Figure 10 )

trr

Reverse recovery time

115

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