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STN3NE06 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 STN3NE06
상세설명  N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STN3NE06 데이터시트(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-pcb
Rthj- amb
Tl
Thermal Resistance Junction-PC Board
Max
Thermal Resistance Junction-ambient
Max
(Surface Mount ed)
Maximum Lead Temperature For Soldering Purpose
50
60
260
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max)
3A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =25 V)
20
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
µAVGS =0
60
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating
Tc =125
oC
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID =250
µA
2
34V
RDS(on)
St atic Drain-source On
Resistance
VGS =10 V
ID = 6A
0.080
0.100
Ω
ID(o n)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
3A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconduct ance
VDS >ID(on) xRDS(on) max
ID =1.5 A
1
3
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0 V
760
100
30
1000
140
45
pF
pF
pF
STN3NE06
2/9



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