STN3PF06 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

STN3PF06

2/6

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-pcb

Thermal Resistance Junction-PC Board Max

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

(Surface Mounted)

°C/W

Maximum Lead Temperature For Soldering Purpose

260

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

1µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 1.25 A

0.18

0.20

Ω

ID(on)

On State Drain Current

VDS > ID(on) x RDS(on)max,

VGS =10V

2.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS > ID(on) x RDS(on)max,

ID =1.25 A

1.5

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

850

Coss

Output Capacitance

230

Crss

Reverse Transfer

Capacitance

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