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ESDALC6V1-5M6 데이터시트(PDF) 2 Page - STMicroelectronics |
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ESDALC6V1-5M6 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 11 page ![]() Characteristics ESDALC6V1M6, ESDALC6V1-5M6 2/11 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25° C) Symbol Parameter Value Unit VPP ESD IEC 61000-4-2, air discharge ESD IEC 61000-4-2, contact discharge MIL STD 883G- Method 3015-7: class3B, (human body model) ±15 ±8 25 kV PPP Peak pulse power dissipation (8/20 µs)(1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 30 W Ipp Repetitive peak pulse current typical value (8/20 µs) 3 A Tj Junction temperature 125 ° C Tstg Storage temperature range -55 + 150 ° C TL Maximum lead temperature for soldering during 10 s 260 ° C TOP Operating temperature range -40 + 125 ° C Table 2. Electrical characteristics (Tamb = 25° C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop Symbol Test Condition Min Typ Max Unit VBR IR = 1 mA 6.1 7.2 V IRM VRM = 3 V 70 nA VF IF = 10 mA 1 V Rd 23 Ω αT(1) 1. ΔVBR = αT * (Tamb - 25° C) * VBR (25° C) IR = 1 mA, 5 10-4/° C CVR =0 V DC, F = 1 MHz, Vosc = 30 mVRMS 12 15 pF VV V I RM I R I PP V I I F V V Slope= 1/ Rd V V CL V BR RM V F |
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