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ESDALC6V1W5 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 ESDALC6V1W5
상세설명  Quad TRANSIL array for data protection
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ESDALC6V1W5 데이터시트(HTML) 3 Page - STMicroelectronics

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ESDALC6V1W5
1 Characteristics
3/7
Figure 1.
Peak power dissipation versus
initial junction temperature
Figure 2.
Peak pulse power versus
exponential pulse duration
(Tj initial = 25°C)
Figure 3.
Clamping voltage versus peak pulse
current (Tj initial = 25°C, rectangular
waveform, tp = 2.5 µs)
Figure 4.
Capacitance versus reverse applied
voltage (typical values)
Figure 5.
Relative variation of leakage current
versus junction temperature
(typical values)
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
175
Tj(°C)
Ppp[Tj initial] / Ppp [Tj initial = 25°C]
10
100
1
10
100
tp(µs)
Tj initial = 25°C
Ppp(W)
0.1
1.0
10.0
100.0
0
1020
3040
5060
Vcl(V)
tp=2.5µs
Tj initial =25°C
Ipp(A)
C(pF)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
F=1MHz
Vosc=30mV
RMS
Tj=25°C
VR(V)
IR [Tj] / IR [Tj=25°C]
1
10
100
25
50
75
100
125
150
Tj(°C)
1.E-03
1.E-02
1.E-01
1.E+00
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
IFM (A)
V(V)
FM



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