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STP16NB25FP 데이터시트(PDF) 1 Page - STMicroelectronics |
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STP16NB25FP 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() STP16NB25 STP16NB25FP N - CHANNEL 250V - 0.220 Ω - 16A - TO-220/TO-220FP PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.220 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ® INTERNAL SCHEMATIC DIAGRAM March 1999 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it STP16NB25 ST P16NB25F P VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain- gate Voltage (RGS =20 k Ω) 250 V VGS G ate-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC16 8 A ID Drain Current (continuous) at Tc =100 oC10 5 A IDM ( •) Drain Current (pulsed) 64 32 A Ptot T otal Dissipat ion at Tc =25 oC 140 45 W Derating Factor 1.12 0.36 W / o C dv/dt (1) Peak Diode Recovery voltage slope 5.5 5.5 V/ns VISO I nsulation W ithstand Voltage (DC) ----- 2000 V Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 16A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST P16NB25 ST P16NB25FP 250 V 250 V <0.28 Ω <0.28 Ω 16 A 8A 1/9 |
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