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ITA6V5B3 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 ITA6V5B3
상세설명  Bidirectional Transil array for data line protection
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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ITA6V5B3 데이터시트(HTML) 2 Page - STMicroelectronics

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Characteristics
ITAxxB3
2/8
1
Characteristics
Table 1.
Absolute ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power (8/20 µs)(1)
1.
For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
Tj initial = Tamb
300
W
IPP
Peak pulse current (8/20 µs)(1)
Tj initial = Tamb
40
A
I2tWire I2t value(1)
0.6
A2s
Tj
Maximum operating junction temperature
125
°C
Tstg
Storage temperature range
-55 to +150
°C
TL
Maximum lead temperature for soldering during 10 s
260
°C
Table 2.
Electrical characteristics (Tamb = 25 °C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
C
Capacitance
Order code
VBR
@ IR
IRM @ VRM
VCL @ IPP
VCL @ IPP
αTC
min.
max.
8/20 µs
max.
8/20 µs
max.
max.
(1)
1.
Between I/O pin and ground.
(1)
(1)
(2)
2.
Between two input pins at 0 V Bias, F = 1 MHz.
V
mA
µA
V
V
AVA
10-4/°C
pF
ITA6V5B3
6.5
1
10
5
9.5
10
121
25
4
1100
ITA18B3
18
1
4
15
21102625
9
500
ITA25B3
25
1
4
24
31103625
12
420
VBR
VCL
VRM
IRM
IPP
I
V



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