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M40Z300 데이터시트(PDF) 12 Page - STMicroelectronics |
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M40Z300 데이터시트(HTML) 12 Page - STMicroelectronics |
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12 / 25 page ![]() Operation M40Z300, M40Z300W 12/25 absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1µF (as shown in Figure 7) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 7. Supply voltage protection AI00622 VCC 0.1 μF DEVICE VCC VSS |
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