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STP20N10 데이터시트(PDF) 1 Page - STMicroelectronics |
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STP20N10 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() STP20N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR s TYPICAL RDS(on) = 0.09 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175 oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS R DS(on) ID STP20N10 100 V < 0. 12 Ω 20 A 1 2 3 TO-220 December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Voltage (VGS = 0) 100 V VDG R Drain- gate Voltage (RGS =20 k Ω) 100 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at T c =25 oC20 A ID Drain Current (cont inuous) at T c =100 oC14 A IDM( •) Drain Current (pulsed) 80 A Ptot Total Dissipation at Tc =25 oC 105 W Derating Factor 0.7 W/ oC Tstg St orage Temperat ure -65 to 175 oC Tj Max. Operat ing Junction Temperature 175 oC ( •) Pulse width limited by safe operating area 1/9 |
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