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STB20NM50 데이터시트(PDF) 4 Page - STMicroelectronics

부품명 STB20NM50
상세설명  N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
PDF  16 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STB20NM50 데이터시트(HTML) 4 Page - STMicroelectronics

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2 Electrical characteristics
STB20NM50-1 - STB20NM50 - STP20NM50 - STP20NM50FP
4/16
Table 6.
Switching times
Table 7.
Source drain diode
(1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Pulse width limited by safe operating area
(3) Limited only by maximum temperature allowed
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD=250 V, ID=10A,
RG=4.7Ω, VGS=10V
(see Figure 16)
24
16
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD=400 V, ID=20A,
RG=4.7Ω, VGS=10V
(see Figure 16)
9
8.5
23
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDMNote 2
Source-drain Current
Source-drain Current (pulsed)
20
80
A
A
VSDNote 4
Forward on Voltage
ISD=20A, VGS=0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=20A, di/dt = 100A/µs,
VDD=100 V, Tj=25°C
350
4.6
26
ns
µC
A
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=20A, di/dt = 100A/µs,
VDD=100 V, Tj=150°C
435
5.9
27
ns
µC
A



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