STE30NK90Z datasheet(3/13 Pages) STMICROELECTRONICS

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STE30NK90Z

Electrical ratings

3/13

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

900

VDGR

Drain-gate voltage (RGS = 20 kΩ)

900

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

112

Ptot

Total dissipation at TC = 25°C

500

Derating Factor

4.3

W/°C

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5KW)

6.5

dv/dt (2)

ISD ≤28A, di/dt ≤200A/µs, VDD ≤V(BR)DSS,

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (AC-RMS) from all

four terminals to external heatsink

2500

Tstg

Storage temperature

-65 to 150

°C

Max. operating junction temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

0.23

°C/W

Rthj-amb

Thermal resistance junction-ambient max

°C/W

Table 3.

Avalanche characteristics

Symbol

Parameter

Max Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 35 V)

500

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