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P3NA90FI 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 P3NA90FI
상세설명  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  6 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P3NA90FI 데이터시트(HTML) 2 Page - STMicroelectronics

  P3NA90FI Datasheet HTML 1Page - STMicroelectronics P3NA90FI Datasheet HTML 2Page - STMicroelectronics P3NA90FI Datasheet HTML 3Page - STMicroelectronics P3NA90FI Datasheet HTML 4Page - STMicroelectronics P3NA90FI Datasheet HTML 5Page - STMicroelectronics P3NA90FI Datasheet HTML 6Page - STMicroelectronics  
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THERMAL DATA
TO 220
IS OW ATT 220
Rthj-ca se
Thermal Resistance Junction-case
Max
0.8
3.12
oC/W
Rthj- amb
Rthc- si nk
Tl
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Max Valu e
Uni t
IAR
Avalanche Current , Repet itive or Not -Repetitive
(pulse widt h limited by Tj max,
δ <1%)
3A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =50 V)
45
mJ
EAR
Repetit ive Avalanche Energy
(pulse widt h limited by Tj max,
δ <1%)
2mJ
IAR
Avalanche Current , Repet itive or Not -Repetitive
(Tc =100
oC, pulse width limited by Tj max, δ <1%)
2A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID = 250
µAVGS = 0
900
V
IDSS
Zero Gat e Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS =Max Rating x0.8
Tc = 125
oC
250
1000
µA
µA
IGSS
Gate-Source Leakage
Current (VDS =0)
VGS =
± 30 V
±100
mA
ON (
∗)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate T hreshold Voltage VDS =VGS
ID = 250
µA2.25
3
3.75
V
RDS( on)
St atic Drain-source On
Resistance
VGS =10 V
ID =1. 5 A
VGS =10 V
ID =1.5 A
Tc = 100
oC
4.4
5.3
10.6
Ω
Ω
ID(o n)
On Stat e Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
3A
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID =1.5 A
1. 5
2.8
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse Transfer
Capacitance
VDS = 25V
f = 1MHz
VGS = 0
690
80
20
900
105
30
pF
pF
pF
STP3NA90/FI
2/6



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