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STB45NF06L 데이터시트(PDF) 3 Page - STMicroelectronics |
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STB45NF06L 데이터시트(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() 3/10 STP45NF06L - STB45NF06L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =30V, ID =19A RG = 4.7Ω VGS =10V (see test circuit, Figure 3) 30 ns tr Rise Time 105 ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =48V, ID = 38A, VGS =5V 23 7 10 31 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 30V, ID =19A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 65 25 ns ns td(off) Off-voltage Rise Time Vclamp =48V, ID =38A RG =4.7Ω, VGS = 10V 50 ns tf Fall Time (see test circuit, Figure 5) 55 ns tc Cross-over Time 85 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 38 A ISDM (2) Source-drain Current (pulsed) 152 A VSD (1) Forward On Voltage ISD = 38A, VGS =0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 38A, di/dt = 100A/µs, VDD =100V, Tj =150°C (see test circuit, Figure 5) 70 110 4 ns nC A Thermal Impedence Safe Operating Area |
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