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STP4N100 데이터시트(PDF) 1 Page - STMicroelectronics

부품명 STP4N100
상세설명  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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제조업체  STMICROELECTRONICS [STMicroelectronics]
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STP4N100 데이터시트(HTML) 1 Page - STMicroelectronics

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STP4N100
STP4N100FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
s
TYPICAL RDS(on) = 3.1
Ω
s
AVALANCHE RUGGED TECHNOLOGY
s
100% AVALANCHE TESTED
s
REPETITIVE AVALANCHE DATA AT 100
oC
s
LOW INPUT CAPACITANCE
s
LOW GATE CHARGE
s
APPLICATION ORIENTED
CHARACTERIZATION
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
CONSUMER AND INDUSTRIAL LIGHTING
s
DC-AC INVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
VDSS
R DS(on)
ID
STP4N100
STP4N100FI
1000 V
1000 V
<3. 5
Ω
<3. 5
Ω
4A
2.2 A
1
2
3
TO-220
ISOWATT220
December 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Val ue
Unit
STP4N100
STP4N100FI
VDS
Drain-source Voltage (VGS = 0)
1000
V
VDG R
Drain- gate Voltage (RGS =20 k
Ω)
1000
V
VGS
Gate-source Voltage
± 20
V
ID
Drain Current (cont inuous) at T c =25
oC4
2.2
A
ID
Drain Current (cont inuous) at T c =100
oC2.5
1.4
A
IDM(
•)
Drain Current (pulsed)
16
16
A
Ptot
Total Dissipation at Tc =25
oC
125
40
W
Derating Factor
1
0.32
W/
oC
VISO
I nsulat ion Withstand Voltage (DC)
2000
V
Tstg
St orage Temperat ure
-65 to 150
oC
Tj
Max. Operat ing Junction Temperature
150
oC
(
•) Pulse width limited by safe operating area
1
2
3
1/10


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