STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1

2/13

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

(*) Limited only by maximum temperature allowed

THERMAL DATA

AVALANCHE CHARACTERISTICS

GATE-SOURCE ZENER DIODE

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Value

Unit

STP4NK80Z

STP4NK80ZFP

STD4NK80Z

STD4NK80Z-1

800

V

800

V

Gate- source Voltage

± 30

V

3

3 (*)

3

A

1.89

1.89 (*)

1.89

A

Drain Current (pulsed)

12

12 (*)

12

A

80

25

80

W

Derating Factor

0.64

0.21

0.64

W/°C

Gate source ESD(HBM-C=100pF, R=1.5K

Ω)

3000

KV

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ns

Insulation Withstand Voltage (DC)

-

2500

-

V

Operating Junction Temperature

Storage Temperature

-55to150

°C

TO-220

TO-220FP

DPAK

IPAK

Rthj-case

Thermal Resistance Junction-case Max

1.56

5

1.56

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

Avalanche Current, Repetitive or Not-Repetitive

3A

Single Pulse Avalanche Energy

190

mJ

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

30

V