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AP70L02GS 데이터시트(PDF) 1 Page - Advanced Power Electronics Corp.

부품명 AP70L02GS
상세설명  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  8 Pages
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제조업체  A-POWER [Advanced Power Electronics Corp.]
홈페이지  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP70L02GS 데이터시트(HTML) 1 Page - Advanced Power Electronics Corp.

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Advanced Power
N-CHANNEL ENHANCEMENT MODE
Electronics Corp.
POWER MOSFET
▼ Low On-resistance
BVDSS
25V
▼ Simple Drive Requirement
RDS(ON)
9mΩ
▼ Fast Switching
ID
66A
Description
Absolute Maximum Ratings
Symbol
Units
VDS
V
VGS
V
ID@TC=25℃
A
ID@TC=100℃
A
IDM
A
PD@TC=25℃
W
W/℃
TSTG
℃
TJ
℃
Symbol
Value
Unit
Rthj-case
Thermal Resistance Junction-case
Max.
1.9
℃/W
Rthj-amb
Thermal Resistance Junction-ambient
Max.
62
℃/W
Data & specifications subject to change without notice
200831073-1/6
Thermal Data
Parameter
Pulsed Drain Current
1
210
Operating Junction Temperature Range
-55 to 150
Linear Derating Factor
0.53
Storage Temperature Range
Total Power Dissipation
66
-55 to 150
Continuous Drain Current, VGS @ 10V
66
Continuous Drain Current, VGS @ 10V
42
Drain-Source Voltage
25
Gate-Source Voltage
±20
AP70L02GS/P
Parameter
Rating
RoHS-compliant Product
G
D
S
G D
S
TO-263(S)
G
D
S
TO-220(P)
The Advanced Power MOSFETs from APEC provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(AP70L02GP) is available for low-profile applications.


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