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P5NC50FP 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 P5NC50FP
상세설명  N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™ I MOSFET
PDF  12 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P5NC50FP 데이터시트(HTML) 3 Page - STMicroelectronics

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STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Safe Operating Area for TO-220FP
Safe Operating Area for TO-220/D2PAK/I2PAK
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulseduration=300µs, duty cycle1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
Rise Time
VDD =250V, ID = 2.5A
RG = 4.7Ω VGS =10V
(see test circuit, Figure 3)
14
ns
tr
15
ns
Qg
Total Gate Charge
VDD =400V, ID = 5.5A,
VGS =10V
17.5
24.5
nC
Qgs
Gate-Source Charge
3
nC
Qgd
Gate-Drain Charge
9
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 5.5A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
12
ns
tf
Fall Time
14
ns
tc
Cross-over Time
20
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
5.5
A
ISDM (2)
Source-drain Current (pulsed)
22
A
VSD (1)
Forward On Voltage
ISD = 5.5A, VGS =0
1.6
V
trr
Reverse Recovery Time
ISD = 5.5A, di/dt = 100A/µs,
VDD =100V, Tj =150°C
(see test circuit, Figure 5)
360
ns
Qrr
Reverse Recovery Charge
1.6
µC
IRRM
Reverse Recovery Current
9
A



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