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STP80NF55L-08 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STP80NF55L-08
상세설명  N-CHANNEL 55V - 0.0065ohm - 80A - TO-220/D2PAK STripFET™ II POWER MOSFET
PDF  8 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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STP80NF55L-08 데이터시트(HTML) 3 Page - STMicroelectronics

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STP80NF55L-08
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =27V, ID =40A
RG = 4.7Ω VGS =4.5V
(see test circuit, Figure 3)
35
ns
tr
Rise Time
145
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =27.5V,ID = 80A,
VGS = 4.5V
75
20
30
100
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 27V, ID =40A,
RG =4.7Ω, VGS = 4.5V
(see test circuit, Figure 3)
85
65
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
80
A
ISDM (2)
Source-drain Current (pulsed)
320
A
VSD (2)
Forward On Voltage
ISD = 80A, VGS =0
1.5
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD =20V, Tj = 150°C
(see test circuit, Figure 5)
85
280
6.5
ns
nC
A



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