STPS10150CG datasheet(3/5 Pages) STMICROELECTRONICS

3 / 5 page

STPS10150CT/CG

3/5

1E-3

1E-2

1E-1

1E+0

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=125°C

δ=0.5

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

δ=tp/T

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration (per diode).

100

125

150

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

1E+5

VR(V)

IR(µA)

Tj=75°C

Tj=25°C

Tj=125°C

Tj=150°C

Tj=175°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode)

100

200

100

200

VR(V)

C(pF)

F=1MHz

Tj=25°C

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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