STPS10L40CG datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

IR *

Reverse leakage

current

Tj = 25

°CVR =VRRM

0.2

Tj = 100

°C

825

VF *

Forward voltage drop

Tj = 25

°CIF =5 A

0.53

Tj = 125

°CIF =5 A

0.36

0.46

Tj = 25

°CIF =10 A

0.67

Tj = 125

°CIF =10 A

0.49

0.59

Pulse test : * tp = 380

µs, δ <2%

To evaluate the conduction losses use the following equation :

P = 0.33 x IF(AV) + 0.026 IF

(RMS)

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-220AB

2PAK

Per diode

Total

1.7

°C/W

Rth (c)

Coupling

0.35

Rth (j-c)

Junction to case

ISOWATT220AB

Per diode

Total

3.8

°C/W

Rth (c)

Coupling

2.5

THERMAL RESISTANCES

When the diodes 1 and 2 are used simultaneously :

∆ Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av) (A)

PF(av)(W)

δ = 0.2

δ = 0.5

δ =1

δ = 0.05

δ = 0.1

δ=tp/T

Fig. 1: Average forward power dissipation versus

average forward current (per diode).

100

125

150

IF(av)(A)

Rth(j-a)=15

°C/W

Rth(j-a)=Rth(j-c)

Tamb(

°C)

δ=tp/T

Fig. 2: Average forward current versus ambient

temperature (

δ=0.5, per diode).

STPS10L40CT/CG/CF

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