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BCY59 데이터시트(PDF) 2 Page - STMicroelectronics

부품명 BCY59
상세설명  SMALL SIGNAL NPN TRANSISTORxbitm
PDF  6 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BCY59 데이터시트(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
150
384.6
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = 45 V
VCE = 45 V
TC = 150
oC
0.1
0.1
10
10
nA
µA
ICEX
Collector Cut-off
Current (VBE = -0.2 V)
VCE = 45 V
TC = 100
oC20
µA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
10
nA
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 2 mA
45
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
µA
7V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 10 mA
IB = 0.25 mA
IC = 100 mA
IB = 2.5 mA
0.12
0.4
0.35
0.7
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 10 mA
IB = 0.25 mA
IC = 100 mA
IB = 2.5 mA
0.6
0.75
0.7
0.9
0.85
1.2
V
V
VBE(on)
∗ Base-Emitter (on)
Voltage
IC = 2 mA
VCE = 5 V
IC = 100 mA
VCE = 1 V
0.55
0.65
0.75
0.7
V
V
hFE
∗
DC Current Gain
IC = 10
µA
VCE = 5 V
Gr. VIII
Gr. IX
Gr. X
IC = 2 mA
VCE = 5 V
Gr. VIII
Gr. IX
Gr. X
IC = 10 mA
VCE = 1 V
Gr. VIII
Gr. IX
Gr. X
IC = 100 mA
VCE = 1 V
Gr. VIII
Gr. IX
Gr. X
20
40
100
180
250
380
120
160
240
45
60
60
140
195
280
250
350
500
260
365
520
310
460
630
hfe
∗
Small Signal Current
Gain
IC = 2 mA
VCE = 5 V f = 1 KHz
Gr. VIII
Gr. IX
Gr. X
175
250
350
350
500
700
fT
Transition Frequency
IC = 10 mA
VCE = 5 V f = 100 MHz
200
MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %
BCY59
2/6



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