BU508AFI datasheet(2/8 Pages) STMICROELECTRONICS

부품명	BU508AFI

상세설명	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

PDF	8 Pages

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제조업체	STMICROELECTRONICS [STMicroelectronics]

홈페이지	http://www.st.com

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THERMAL DATA

TO-3

TO-218

ISOWATT218

Rthj-case

Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1500 V

TC = 125

o C

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

100

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

700

VEBO

Emitter Base Voltage

(IC = 0)

IE = 10 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 4.5 A

IB = 2 A

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 4.5 A

IB = 2 A

1.3

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4.5 A

hFE = 2.5

VCC = 140 V

LC = 0.9 mH

LB = 3

µH

550

µs

Transition Frequency

IC = 0.1 A

VCE = 5 V

f = 5 MHz

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area (TO-3)

Safe Operating Areas (TO-218/ISOWATT218)

BU208A / BU508A / BU508AFI

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