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MP3V5050VC6U 데이터시트(PDF) 3 Page - Freescale Semiconductor, Inc

부품명 MP3V5050VC6U
상세설명  High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
PDF  8 Pages
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제조업체  FREESCALE [Freescale Semiconductor, Inc]
홈페이지  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MP3V5050VC6U 데이터시트(HTML) 3 Page - Freescale Semiconductor, Inc

  MP3V5050VC6U Datasheet HTML 1Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 2Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 3Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 4Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 5Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 6Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 7Page - Freescale Semiconductor, Inc MP3V5050VC6U Datasheet HTML 8Page - Freescale Semiconductor, Inc  
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MP3V5050V
Sensors
Freescale Semiconductor
3
Figure 2. Cross-Sectional Diagram
(not to scale)
Figure 3. Typical Application Circuit
(Output Source Current Operation)
TRANSFER FUNCTION MP3V5050VC6T1
Figure 4. Output versus Differential Pressure
Figure 4 shows the sensor output signal relative to
pressure input. Typical minimum and maximum output
curves are shown for operation over 0 to 85
°C temperature
range. The output will saturate outside of the rated pressure
range.
A fluorosilicone gel isolates the die surface and wire bonds
from the environment, while allowing the pressure signal to
be transmitted to the silicon diaphragm. The MP3V5050V
pressure sensor operating characteristics, internal reliability
and qualification tests are based on use of dry air as the
pressure media. Media other than dry air may have adverse
effects on sensor performance and long-term reliability.
Contact the factory for information regarding media
compatibility in your application.
DIFFERENTIAL SENSING ELEMENT
P2
WIRE BOND
STAINLESS
STEEL CAP
THERMOPLASTIC
CASE
DIE BOND
LEAD
FRAME
DIE
FLUOROSILICONE
GEL DIE COAT
P1
+3 V
1.0
µF
0.01
µF
470 pF
GND
Vs
Vout
IPS
OUTPUT
0
–10
–20
–30
–40
–50
Pressure (kPa)
1
3
0
Offset
(Typ)
Transfer Function:
Vout = VS x (0.018 x P + 0.94) ± (PE x TM x 0.018 x Vs)
Vs = 3.0 ± 0.30 Vdc
PE = 1.25
TM = 1
Temperature = 0 to 85
°C
MAX
MIN
TYPICAL
2



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