STPS30150CFP datasheet(3/6 Pages) STMICROELECTRONICS

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STPS30150CT/CW/CFP

3/6

1E-3

1E-2

1E-1

1E+0

100

150

200

250

t(s)

IM(A)

Tc=50°C

Tc=75°C

Tc=125°C

δ=0.5

Fig. 5-1: Non repetitive surge peak forward

current versus overload duration (maximum

values, per diode).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6-1: Relative variation of thermal impedance

junction to case versus pulse duration (per diode)

1E-3

1E-2

1E-1

1E+0

100

120

140

t(s)

IM(A)

Tc=25°C

Tc=125°C

Tc=75°C

δ=0.5

Fig. 5-2: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode) (TO-220FPAB only).

1E-3

1E-2

1E-1

1E+0

1E+1

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6-2: Relative variation of thermal impedance

junction

case

versus

pulse

duration.

(TO-220FPAB)

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(t )

(25°C)

ARM p

ARM

Fig. 4: Normalized avalanche power derating

versus junction temperature.

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(t )

(1µs)

ARM p

ARM

Fig. 3: Normalized avalanche power derating

versus pulse duration.

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