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MD2103DFP 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 MD2103DFP
상세설명  High voltage NPN power transistor for standard definition CRT display
PDF  9 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
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MD2103DFP 데이터시트(HTML) 3 Page - STMicroelectronics

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MD2103DFP
Electrical characteristics
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Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note:
Note (1) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICES
Collector cut-off current
(VBE =0)
VCE = 1500V
VCE = 1500V TC = 125°C
0.2
2
mA
mA
IEBO
Emitter cut-off current
(IC =0)
VEB = 5V
50
125
mA
V(BR)EBO
Emitter-base brakdown
voltage (IC = 0)
IE = 700mA
11
V
VCE(sat)
(1)
Collector-emitter
saturation voltage
IC = 3A
_ _ IB =0.75A
1.8
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 3A
_ _ IB =0.75A
1.5
V
hFE
(1)
DC current gain
IC = 1A
VCE =5V
IC = 3A
VCE =1V
IC = 3A
VCE =5V
6.5
17
6
9.5
ts
tf
Inductive load
Storage time
Fall time
IC =3A
fh =16kHz
IB(on) =0.5A VBE(off) =-2.7V
LBB(off) =6.3µH
(see Figure 12)
3.8
0.25
µs
µs
VF
Diode forward voltage
IF = 3A
2V



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