2SA1122 datasheet(3/5 Pages) RENESAS

부품명	2SA1122

상세설명	Silicon PNP Epitaxial

PDF	5 Pages

Scroll/Zoom	100%

제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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3 / 5 page

2SA1122

Rev.2.00 Aug 10, 2005 page 3 of 4

Main Characteristics

Collector to Emitter Voltage VCE (V)

Typical Output Characteristics

–10

–8

–6

–4

–2

–10

–8

–6

–4

–2

IB = 0

–5

µA

–10

–15

–20

–25

–30

Typical Transfer Characteristics

–10

–20

–50

–100

–200

–500

–1 m

–2 m

–5 m

–10 m

–20 m

–50 m

–100 m

Base to Emitter Voltage VBE (V)

–1.0

–0.8

–0.6

–0.4

–0.2

VCE = –12 V

DC Current Transfer Ratio vs.

Collector Current

Collector Current IC (A)

–10

–100

–1 m

–10 m

–50 m

100

1,000

10,000

VCE = –12 V

Collector Output Capacitance vs.

Collector to Base Voltage

Collector to Base Voltage VCB (V)

–1

–2

–5

–10

–20

–50

f = 1 MHz

IE = 0

100

150

Ambient Temperature Ta (°C)

Maximum Collector Dissipation Curve

150

100

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