| 전자부품 데이터시트 검색엔진 |
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STPS5H100B 데이터시트(PDF) 2 Page - STMicroelectronics |
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STPS5H100B 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 5 page ![]() STPS5H100 2/5 Table 4: Thermal Parameters Table 5: Static Electrical Characteristics Pulse test: * tp = 5 ms, δ < 2% ** tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.51 x IF(AV) + 0.02 IF 2 (RMS) Symbol Parameter Value Unit Rth(j-c) Junction to case 2.5 °C/W Symbol Parameter Tests conditions Min. Typ Max. Unit IR * Reverse leakage current Tj = 25°C VR = VRRM 3.5 µA Tj = 125°C 1.3 4.5 mA VF ** Forward voltage drop Tj = 25°C IF = 5A 0.73 V Tj = 125°C 0.57 0.61 Tj = 25°C IF = 10A 0.85 Tj = 125°C 0.66 0.71 Figure 1: Average forward power dissipation versus average forward current Figure 2: Average forward current versus ambient temperature ( δ = 0.5) Figure 3: Normalized avalanche power derating versus pulse duration Figure 4: Normalized avalanche power derating versus junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IF(av) (A) PF(av)(W) δ = 1 δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.05 T δ=tp/T tp 0 20 40 60 80 100 120 140 160 180 0 1 2 3 4 5 6 Tamb(°C) IF(av)(A) Rth(j-a)=80°C/W Rth(j-a)=Rth(j-c) T δ=tp/T tp 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (µs) p P(t ) P (1µs) ARM p ARM 0 0.2 0.4 0.6 0.8 1 1.2 0 25 50 75 100 125 150 T (°C) j P(t ) P (25°C) ARM p ARM |
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