2SC535 datasheet(2/8 Pages) RENESAS

2 / 8 page

2SC535

Rev.2.00 Aug 10, 2005 page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

—

IC = 10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

—

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.5

µA

VCB = 10 V, IE = 0

DC current transfer ratio

hFE*

—

200

VCE = 6 V, IC = 1 mA

Base to emitter voltage

VBE

—

0.72

—

VCE = 6 V, IC = 1 mA

Collector to emitter saturation voltage

VCE(sat)

—

0.17

—

IC = 20 mA, IB =4 mA

Gain bandwidth product

450

940

—

MHz

VCE = 6 V, IC = 5 mA

Collector output capacitance

Cob

—

0.9

1.2

VCB = 10 V, IE = 0, f = 1 MHz

Power gain

—

VCE = 6 V, IC = 1 mA,

f = 100 MHz

Noise figure

—

3.5

5.5

VCE = 6 V, IC = 1 mA,

f = 100 MHz, Rg = 50

Ω

Input admittance (typ)

yie

1.3 + j5.3

VCE = 6 V, IC = 1 mA,

f = 100 MHz

Reverse transfer admittance (typ)

yre

–0.078 – j0.41

Forward transfer admittance (typ)

yfe

32 – j10

Output admittance (typ)

yoe

0.08 + j0.82

Note:

1. The 2SC535 is grouped by hFE as follows.

60 to 120

100 to 200

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