STP20NM50FD datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STB20NM50FD - STF20NM50FD - STP20NM50FD

4/16

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS= 0

500

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,@125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 30 V

± 100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 10 A

0.22

0.25

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward transconductance

VDS > ID(on) x RDS(on)max,

ID= 10 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f =1 MHz,

VGS = 0

1380

290

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 400 V

130

Gate input resistance

f=1 MHz Gate DC Bias=0

Test signal level=20 mV

open drain

2.8

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 400 V, ID = 20 A

VGS = 10 V

(see Figure 16)

STP20NM50FD 데이터시트(PDF) 4 Page - STMicroelectronics

STP20NM50FD 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

데이터시트 다운로드

링크 URL