STPS80H100TV

®

July 1999 - Ed: 3A

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

High voltage dual Schottky barrier rectifier

designed for high frequency telecom and

computer Switched Mode Power Supplies

and other power converters.

Packaged in ISOTOP, this device is intended for

use in medium voltage operation, and particu-

larly, in high frequen cy circuitries where low

switching losses and low noise are required.

DESCRIPTION

K2

K1

A2

A1

Symbol

Parameter

Value

Unit

Repetitive peak reverse voltage

100

V

RMS forward current

125

A

Average forward current

Tc = 120

°C

δ = 0.5

Per diode

Per device

40

80

A

Surge non repetitive forward current

tp = 10 ms sinusoidal

700

A

Repetitive peak reverse current

tp = 2

µs square F = 1kHz

2

A

Non repetitive peak reverse current

tp = 100

µs square

5

A

Storage temperature range

- 55 to+ 150

°C

Tj

Maximum operating junction temperature *

150

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/

µs

ABSOLUTE RATINGS (limiting values, per diode)

2 x 40 A

100 V

Tj (max)

150

°C

0.65 V

MAIN PRODUCT CHARACTERISTICS

NEGLIGIBLESWITCHING LOSSES

HIGH JUNCTION TEMPERATURE CAPABILITY

LOW LEAKAGE CURRENT

GOOD TRADE OFF BETWEEN LEAKAGECUR-

RENT AND FORWARD VOLTAGE DROP

AVALANCHE RATED

LOW INDUCTANCE PACKAGE

INSULATED PACKAGE :

Capacitance = 45 pF

FEATURES AND BENEFITS

*:

dPtot

dTj

<

1

Rth

(j−a)

thermal runaway condition for a diode on its own heatsink

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