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STS4DNF30L 데이터시트(PDF) 3 Page - STMicroelectronics

부품명 STS4DNF30L
상세설명  DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET™ POWER MOSFET
PDF  6 Pages
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제조업체  STMICROELECTRONICS [STMicroelectronics]
홈페이지  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS4DNF30L 데이터시트(HTML) 3 Page - STMicroelectronics

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STS4DNF30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD =15 V,ID =2A RG = 4.7Ω
VGS = 4.5 V
(see test circuit, Figure 3)
11
ns
tr
Rise Time
100
ns
Qg
Total Gate Charge
VDD =24 V,ID =4 A,
VGS =10 V
6.5
9
nC
Qgs
Gate-Source Charge
3.6
nC
Qgd
Gate-Drain Charge
2
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD =15 V,ID =2 A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
25
22
ns
ns
tr(Voff)
tf
tc
Off-Voltage Rise Time
Fall Time
Cross-over Time
VDD =24 V,ID =4 A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 5)
22
55
75
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
4
A
ISDM (2)
Source-drain Current (pulsed)
16
A
VSD (1)
Forward On Voltage
ISD = 4 A, VGS =0
1.2
V
trr
Reverse Recovery Time
ISD = 4 A, di/dt = 100A/µs,
VDD =20 V,Tj = 150°C
(see test circuit, Figure 5)
30
ns
Qrr
Reverse Recovery Charge
18
nC
IRRM
Reverse Recovery Current
1.2
A



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