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2SC5080 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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2SC5080 데이터시트(HTML) 1 Page - Renesas Technology Corp |
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1 / 8 page ![]() Rev.3.00 Aug 10, 2005 page 1 of 7 2SC5080 Silicon NPN Epitaxial REJ03G0742-0300 (Previous ADE-208-1132A) Rev.3.00 Aug.10.2005 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz Typ • High gain, low noise figure PG = 18 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Outline RENESAS Package code: PLSP0004ZA-A (Package name: MPAK-4) 1. Collector 2. Emitter 3. Base 4. Emitter 1 4 3 2 Note: Marking is “ZD–”. Attention: This device is very sensitive to electro static discharge. It is recommended to adopt appropriate cautions when handling this transistor. Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 8 V Emitter to base voltage VEBO 1.5 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C |
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