| 전자부품 데이터시트 검색엔진 |
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2SC5545 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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2SC5545 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 8 page ![]() 2SC5545 Rev.2.00 Aug 10, 2005 page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 15 — — V IC = 10 µA , IE = 0 Collector cutoff current ICBO — — 1 µA VCB = 12V , IE = 0 Collector cutoff current ICEO — — 1 mA VCE = 6V , RBE = ∞ Emitter cutoff current IEBO — — 10 µA VEB = 1.5V , IC = 0 DC current transfer ratio hFE 80 120 160 VCE = 3V , IC = 20mA Collector output capacitance Cob — 0.69 1.1 pF VCB = 3V , IE = 0 f = 1MHz Gain bandwidth product fT 10 12.6 — GHz VCE = 3V , IC = 20mA Power gain PG 14 16 — dB VCE = 3V, IC = 20mA f = 900MHz Noise figure NF — 1.1 2.0 dB VCE = 3V, IC = 5mA f = 900MHz |
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