| 전자부품 데이터시트 검색엔진 |
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2SC5702 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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2SC5702 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 15 page ![]() 2SC5702 Rev.2.00 Aug 10, 2005 page 2 of 14 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to base breakdown voltage V(BR)CBO 15 18.5 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 1 µA VCB = 10 V, IE = 0 Collector cutoff current ICEO 1 mA VCE = 4 V, RBE = ∞ Emitter cutoff current IEBO 10 mA VEB = 1.5V, IC = 0 DC current transfer ratio hFE 80 120 160 VCE = 1 V, IC = 5 mA Collector output capacitance Cob 0.85 1.2 pF VCB = 1 V, IE = 0 f = 1 MHz Gain bandwidth product fT 6.5 8.0 GHz VCE = 1 V, IC = 5 mA f = 1 MHz Power gain PG 11 13 dB VCE = 1 V, IC = 5 mA f = 900 MHz Noise figure NF 1.05 1.9 dB VCE = 1 V, IC = 5 mA f = 900 MHz |
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