2SC5812 datasheet(2/9 Pages) RENESAS

부품명	2SC5812

상세설명	Silicon NPN Epitaxial VHF/UHF wide band amplifier

PDF	9 Pages

Scroll/Zoom	100%

제조업체	RENESAS [Renesas Technology Corp]

홈페이지	http://www.renesas.com

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2 / 9 page

2SC5812

Rev.1.00 Aug 10, 2005 page 2 of 8

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO



IC = 10

µA, IE = 0

Collector cutoff current

ICBO



0.1

µA

VCB = 15 V, IE = 0

Collector cutoff current

ICEO



µA

VCE = 4 V, RBE =

∞

Emitter cutoff current

IEBO



0.1

µA

VEB = 0.8 V, IC = 0

DC current transfer ratio

hFE

100

120

150

VCE = 1 V, IC = 5 mA

Reverse transfer capacitance

Cre



0.2



VCE = 1 V, Emitter ground,

f = 1 MHz

Collector output capacitance

Cob



0.4

0.7

VCB = 1 V, IE = 0,

f = 1 MHz

Gain bandwidth product

fT(1)



GHz

VCE = 1V, IC = 5 mA

Gain bandwidth product

fT(2)



GHz

VCE = 1V, IC = 20 mA

Forward transmission coefficient

|S21|



VCE = 1 V, IC = 5 mA,

f = 900 MHz

Noise figure



1.0

1.7

VCE = 1 V, IC = 5 mA,

f = 900 MHz,

ZS = ZL = 50

Ω

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