| 전자부품 데이터시트 검색엔진 |
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STS5DNF20V 데이터시트(PDF) 2 Page - STMicroelectronics |
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STS5DNF20V 데이터시트(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() STS5DNF20V 2/8 THERMAL DATA ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF ON (*) DYNAMIC Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Single Operation Thermal Resistance Junction-ambient Dual Operation Max. Operating Junction Temperature Storage Temperature Max Max 62.5 78 -55 to 150 -55 to 150 °C/W °C/W °C °C Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 20 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating TC = 125°C 1 10 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 12V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 0.6 V RDS(on) Static Drain-source On Resistance VGS = 4.5 V ID = 2.5 A VGS = 2.7 V ID = 2.5 A 0.030 0.037 0.040 0.045 Ω Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (*) Forward Transconductance VDS=15 V ID = 2.5 A 10 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 15V f = 1 MHz, VGS = 0 460 200 50 pF pF pF |
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