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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RJK0328DPB-00-J0 데이터시트(PDF) 1 Page - Renesas Technology Corp |
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RJK0328DPB-00-J0 데이터시트(HTML) 1 Page - Renesas Technology Corp |
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1 / 7 page  REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Page 1 of 6 RJK0328DPB Silicon N Channel Power MOS FET Power Switching REJ03G1637-0400 Rev.4.00 Apr 10, 2008 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 1.6 mΩ typ. (at VGS = 10 V) • Pb-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) G D SSS 4 1 23 5 1, 2, 3 Source 4 Gate 5 Drain 1 2 3 4 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 60 A Drain peak current ID(pulse) Note1 240 A Body-drain diode reverse drain current IDR 60 A Avalanche current IAP Note 2 30 A Avalanche energy EAR Note 2 90 mJ Channel dissipation Pch Note3 65 W Channel to Case Thermal Resistance θch-C 1.93 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25 °C, Rg ≥ 50 Ω 3. Tc = 25 °C |
유사한 부품 번호 - RJK0328DPB-00-J0 |
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유사한 설명 - RJK0328DPB-00-J0 |
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