STTA312B datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(av) (A)

P1(W)

δ =1

δ = 0.5

δ = 0.2

δ = 0.1

Fig. 1: Conductionlosses versus average current.

0.0

0.5

1.0

1.5

2.0

2.5

3.0

1E-2

1E-1

1E+0

1E+1

3E+1

VFM(V)

IFM(A)

Tj=25

°C

Tj=125

°C

Fig. 2: Forward voltage drop versus forward cur-

rent (maximum values).

1E-3

1E-2

1E-1

1E+0

0.0

0.2

0.4

0.6

0.8

1.0

tp(s)

Zth(j-c)/Rth(j-c)

δ=tp/T

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

Fig. 3: Relative variation of thermal impedance

junction to case versus pulse duration.

1020

304050

607080

100

dIF/dt(A/

µs)

IRM(A)

VR=600V

Tj=125

°C

IF=2*IF(av)

IF=IF(av)

Fig. 4: Peak reverse recovery current versus dIF/dt

(90% confidence).

10203040

50607080

100

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

S factor

IF<2*IF(av)

VR=600V

Tj=125

°C

dIF/dt(A/

µs)

Fig. 6: Softness factor tb/ta versus dIF/dt (typical

values).

102030405060708090

100

200

300

400

500

600

trr(ns)

VR=600V

Tj=125

°C

IF=2*IF(av)

IF=IF(av)

dIF/dt(A/

µs)

Fig. 5: Reverse recovery time versus dIF/dt (90%

confidence).

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