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STTH102 데이터시트(PDF) 1 Page - STMicroelectronics |
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STTH102 데이터시트(HTML) 1 Page - STMicroelectronics |
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1 / 7 page ![]() November 2006 Rev 5 1/7 7 STTH102 High efficiency ultrafast diode Main product characteristics Features and benefits ■ Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature Description The STTH102, which is using ST’s new 200 V planar technology, is specially suited for switching mode base drive and transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Order codes IF(AV) 1 A VRRM 200 V Tj (max) 175° C VF(max) 0.78 V trr (max) 20 ns Part Number Marking STTH102A U12 STTH102 STTH102 STTH102RL STTH102 K A K A SMA (JEDEC DO-214AC) STTH102A DO-41 STTH102 Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V IF(AV) Average forward current SMA TL = 148° C δ = 0.5 1A DO-41 TL = 130° C δ = 0.5 IFSM Surge non repetitive forward current SMA tp = 10 ms Sinusoidal 40 A DO-41 50 Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs www.st.com |
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