HVR100 datasheet(2/5 Pages) RENESAS

2 / 5 page

HVR100

Rev.7.00 Feb 21, 2005 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Reverse voltage

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse voltage

—

IR = 10 µA

Reverse current

—

100

VR = 9 V

421.5

—

524.6

VR = 1 V, f = 1 MHz

182.0

—

275.7

VR = 3 V, f = 1 MHz

73.2

—

121.4

VR = 5 V, f = 1 MHz

42.2

—

72.2

VR = 6 V, f = 1 MHz

26.2

—

41.6

VR = 7 V, f = 1 MHz

Capacitance

20.4

—

28.2

VR = 8 V, f = 1 MHz

Capacitance ratio

—

C1 / C8

Figure of merit

200

—

C = 450 pF, f = 1 MHz

Matching error

∆C/C *1

—

3.0

VR = 1 to 8 V, f = 1 MHz

ESD-Capability *

—

C = 200 pF, Both forward and

reverse direction 1 pulse.

Note:

1. Each group shall uniform a multiple of 3 diodes.

A set of HVR100 is of uniform C-V characteristics.

Measure max. value and min. value of capacitance at each bias point of VR = 1V through 8 V.

Calculate Matching Error,

(Cmax – Cmin)

Cmin

∆C/C =

× 100 (%)

2. Failure criterion ; IR < 100 nA at VR = 9 V

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