STTH2003CG datasheet(4/8 Pages) STMICROELECTRONICS

4 / 8 page

4/8

STTH2003CT/CG/CF/CR/CFP

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

Tj(°C)

IRM

S factor

Fig. 7: Relative variation of dynamic parameters

versus junction temperature (reference: Tj = 125°C).

100 150 200 250 300 350 400 450 500

(V)

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

Fig. 8: Transient peak forward voltage versus

dIF/dt (90% confidence, per diode) (TO-220AB).

100 150 200 250 300 350 400 450 500

100

200

300

400

500

t (ns)

VFR=1.1*VF max.

IF=IF(av)

Tj=125°C

dIF/dt(A/µs)

Fig. 9: Forward recovery time versus dIF/dt (90%

confidence, per diode).

Rth(j-a) (°C/W)

S(Cu) (cm²)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35

µm)

2PAK).

100 150 200 250 300 350 400 450 500

0.00

0.10

0.20

0.30

0.40

0.50

0.60

S factor

VR=200V

Tj=125°C

dIF/dt(A/µs)

Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical

values, per diode).

STTH2003CG 데이터시트(PDF) 4 Page - STMicroelectronics

STTH2003CG 데이터시트(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

데이터시트 다운로드

링크 URL