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HSB226YP 데이터시트(PDF) 2 Page - Renesas Technology Corp |
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HSB226YP 데이터시트(HTML) 2 Page - Renesas Technology Corp |
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2 / 5 page ![]() HSB226YP Rev.2.00 Sep 15, 2006 page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Repetitive peak reverse voltage VRRM 25 V Non-Repetitive peak forward surge current IFSM * 1 *2 200 mA Forward current IF * 2 50 mA Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C Notes: 1. 10 ms sine wave 1 pulse 2. Two device total Electrical Characteristics * (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Condition VF1 — — 0.33 IF = 1 mA Forward voltage VF2 — — 0.38 V IF = 5 mA Reverse current IR — — 450 nA VR = 20 V Capacitance C — — 2.80 pF VR = 1 V, f = 1 MHz Note : Per one device. |
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