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2SC5218 데이터시트(PDF) 4 Page - Renesas Technology Corp

부품명 2SC5218
상세설명  Silicon NPN Epitaxial
PDF  10 Pages
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제조업체  RENESAS [Renesas Technology Corp]
홈페이지  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5218 데이터시트(HTML) 4 Page - Renesas Technology Corp

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2SC5218
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
——V
I
C = 10 µA, IE = 0
Collector cutoff current
I
CBO
——
1
µA
V
CB = 12 V, IE = 0
I
CEO
——
1
mA
V
CE = 9 V, RBE =
Emitter cutoff current
I
EBO
—
—
10
µA
V
EB = 1.5 V, IC = 0
DC current transfer ratio
h
FE
50
120
250
V
CE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.8
1.4
pF
V
CB = 5 V, IE = 0,
f = 1 MHz
Gain bandwidth product
f
T
6.0
9.0
—
GHz
V
CE = 5 V, IC = 20 mA
Power gain
PG
10
13
—
dB
V
CE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.2
2.5
dB
V
CE = 5 V, IC = 5 mA,
f = 900 MHz



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