FS10ASJ-2 datasheet(2/7 Pages) RENESAS

2 / 7 page

FS10ASJ-2

Rev.2.00

Aug 07, 2006

page 2 of 6

Electrical Characteristics

(Tch = 25°C)

Parameter

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain-source breakdown voltage

V(BR)DSS

100

—

ID = 1 mA, VGS = 0 V

Gate-source leakage current

IGSS

—

±0.1

µA

VGS =

±20 V, VDS = 0 V

Drain-source leakage current

IDSS

—

0.1

VDS = 100 V, VGS = 0 V

Gate-source threshold voltage

VGS(th)

1.0

1.5

2.0

ID = 1 mA, VDS = 10 V

Drain-source on-state resistance

rDS(ON)

—

0.14

0.19

Ω

ID = 5 A, VGS = 10 V

Drain-source on-state resistance

rDS(ON)

—

0.16

0.21

Ω

ID = 5 A, VGS = 4 V

Drain-source on-state voltage

VDS(ON)

—

0.70

0.95

ID = 5 A, VGS = 10 V

Forward transfer admittance

| yfs |

—

ID = 5 A, VDS = 5 V

Input capacitance

Ciss

—

800

—

Output capacitance

Coss

—

125

—

Reverse transfer capacitance

Crss

—

VDS = 10 V, VGS = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—

Rise time

—

Turn-off delay time

td(off)

—

Fall time

—

VDD = 50 V, ID = 5 A,

VGS = 10 V,

RGEN = RGS = 50

Ω

Source-drain voltage

VSD

—

1.0

1.5

IS = 5 A, VGS = 0 V

Thermal resistance

Rth(ch-c)

—

4.17

°C/W

Channel to case

Reverse recovery time

trr

—

IS = 10 A, dis/dt = –100 A/

µs

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